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Family of characteristics of floating-gate memory cells (EEPROM) and degradation due to cyclingLONGO, H.-E.Siemens Forschungs- und Entwicklungsberichte. 1987, Vol 16, Num 5, pp 184-191, issn 0370-9736Article

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A high-speed 1-kbit high electron mobility transistor static RAMSHENG, N. H; WANG, H. T; LEE, C. P et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1670-1675, issn 0018-9383, 1Article

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A proposed new structure for SEU immunity in SRAM employing drain resistanceOCHOA, A. JR; AXNESS, C. L; WEAVER, H. T et al.IEEE electron device letters. 1987, Vol 8, Num 11, pp 537-539, issn 0741-3106Article